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Unlike a DRAM requiring accumulated electric charge in capacitor, an SRAM consists of Flip-Flop circuits and two transistors only, hence no need for "Refreshment" and electricity for "Refreshment" process. Therefore, an SDRAM eats up less electricity to retain data, an ideal quality for mobile phones. Since active diodes in SRAM memory cells allow fast data transfer, they can also be aptly used as cache memory for high-capacity, high-powered computers such as engineering workstations or super computers. Technical reliability of our power-saving SRAMs has already been proven in many field tests by major clients. We has a production system that can provide customers with complete line-up of 1M ~ 8M Low-Power SRAMs armed particularly with full CMOS process technology, which excels in low-power activation and saving electricity. We also adopt BGA, Ball Grid Array, method to our chips to shorten data transfer routes, cut down on power-consumption even further, increase transfer speed, and thus cater customer demands for lighter, thinner, shorter and smaller devices.

eMCP

eMMC + LPDDR4x

Density Stack Type Voltage Option Package Type Part Number Status
16GB MLC eMMC 5.1 eMMC 5.1 2CH x32 254B (11.5mm x 13mm) JSMPHE1KM1ASAAGD-H505A C/S
4GB MLC eMMC 5.1 eMMC 5.1 1CH x16 149B (8mm x 9.5mm) JSMPFD1HM1ASAAGB-H505A M/P
4GB MLC eMMC 5.1 eMMC 5.1 1CH x16 149B (8mm x 9.5mm) JSMPFD1HM1ASAAGB-H505 M/P
8GB MLC eMMC 5.1 eMMC 5.1 2CH x32 254B (11.5mm x 13mm) JSMPGD1KM1ASAAGD-H505A M/P
8GB MLC eMMC 5.1 eMMC 5.1 2CH x32 254B (11.5mm x 13mm) JSMPGE1KM1ASAAGD-H505A C/S

eMCP

eMMC + LPDDR2

Density Stack Type Voltage Option Package Type Part Number Status
4GB MLC eMMC 5.1 eMMC 5.0 x32 162B(11.5mm x 13mm) JSMPFC1CM1AS3ABD-H425A M/P