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Unlike a DRAM requiring accumulated electric charge in capacitor, an SRAM consists of Flip-Flop circuits and two transistors only, hence no need for "Refreshment" and electricity for "Refreshment" process. Therefore, an SDRAM eats up less electricity to retain data, an ideal quality for mobile phones. Since active diodes in SRAM memory cells allow fast data transfer, they can also be aptly used as cache memory for high-capacity, high-powered computers such as engineering workstations or super computers. Technical reliability of our power-saving SRAMs has already been proven in many field tests by major clients. We has a production system that can provide customers with complete line-up of 1M ~ 8M Low-Power SRAMs armed particularly with full CMOS process technology, which excels in low-power activation and saving electricity. We also adopt BGA, Ball Grid Array, method to our chips to shorten data transfer routes, cut down on power-consumption even further, increase transfer speed, and thus cater customer demands for lighter, thinner, shorter and smaller devices.

LP SRAM

Low Power SRAM PRODUCTS

Density Data Width Voltage Option Speed Part Number Status
1Mb x8 2.7~3.6V Dual CS 55ns EM610FV8S-55LF M/P
1Mb x16 2.7~3.6V Single CS 55ns EM611FV16U-55LF M/P
1Mb x16 2.7~3.6V Single CS 70ns EM611FV16U-70LF M/P
2Mb x8 2.7~3.6V Dual CS 70ns EM620FV8BS-70LF M/P
2Mb x16 2.7~3.6V Dual CS 55ns EM620FV16BU-55LF M/P
2Mb x16 2.7~3.6V Single CS 55ns EM621FV16BU-55LF M/P
4Mb x8 2.7~3.6V Single CS 55ns EM641FV8FS-55LF M/P
4Mb x16 2.7~3.6V Dual C/S / LBB,UBB(tBA=tCO) 55ns EM646FV16FU-55LF M/P
4Mb x16 2.7~3.6V Single C/S / LBB,UBB(tBA=tCO) 45ns EM641FV16F-45LF M/P
4Mb x16 2.7~3.6V Single CS / LBB,UBB(tBA=tOE) 55ns EM643FV16FU-55LF M/P
4Mb x16 2.7~3.6V Single CS / LBB,UBB(tBA=tOE) 70ns EM643FV16FU-70LF M/P
4Mb x8 5.0V Single CS 55ns EM641FT8S-55LF M/P
8Mb x8 2.7~3.6V Dual CS 45ns EM680FV8BU-45LF M/P
8Mb x16 2.7~3.6V Single CS 55ns EM681FV16BU-55LF M/P