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Unlike a DRAM requiring accumulated electric charge in capacitor, an SRAM consists of Flip-Flop circuits and two transistors only, hence no need for "Refreshment" and electricity for "Refreshment" process. Therefore, an SDRAM eats up less electricity to retain data, an ideal quality for mobile phones. Since active diodes in SRAM memory cells allow fast data transfer, they can also be aptly used as cache memory for high-capacity, high-powered computers such as engineering workstations or super computers. Technical reliability of our power-saving SRAMs has already been proven in many field tests by major clients. We has a production system that can provide customers with complete line-up of 1M ~ 8M Low-Power SRAMs armed particularly with full CMOS process technology, which excels in low-power activation and saving electricity. We also adopt BGA, Ball Grid Array, method to our chips to shorten data transfer routes, cut down on power-consumption even further, increase transfer speed, and thus cater customer demands for lighter, thinner, shorter and smaller devices.

LP DRAM

KGD LP SDR/DDR1 PRODUCTS

Density Data Width Voltage Option Max Frequancy KGD Part Number Status
128Mb x256 1.7~1.95V T2M JSA28562PA M/P
1Gb x8 1.7~1.95V LPDDR 400/533MHz JSD1G164PA M/P
1Gb x8 1.7~1.95V LPDDR 400/533MHz JSD1G324PA M/P
256Mb x16 1.7~1.95V LPDDR 200MHz EMD56164PC M/P
2Gb x16 1.7~1.95V LPDDR2 400/533MHz JSL22G168WA M/P
2Gb x32 1.2V LPDDR2 400/533MHz JSL22G328WA M/P
512Mb x8 1.7~1.95V LPDDR2 400/533MHz JSL212324WAM M/P
512Mb x16 1.7~1.95V LPDDR 200MHz JSD12164PA M/P
512Mb x32 1.7~1.95V LPDDR 200MHz JSD12324PA M/P
64Mb x64 1.7~1.95V T2M JSA64642PB M/P

LP DRAM

PACKAGE LP SDR/DDR1 PRODUCTS

Density Data Width Voltage Option Max Frequancy Package Type Part Number Status
128Mb x8 1.7~1.95V LPSDR 166MHz 54B (8x8x1.2mm) JS828164PCY-60 C/S
128Mb x16 1.2V LPDDR 166MHz 60B (8x9x1.0mm) EMD28164PCH-60x M/P
1Gb x8 1.7~1.95V LPDDR 200MHz 107B (10.5mm x 13mm) JSD1G164PAH-50x M/P
256Mb x8 1.7~1.95V LPSDR 166MHz 54B (8x8x1.2mm) JS856164PCY-60 C/S
256Mb x16 1.7~1.95V LPDDR 166MHz 60B (8x9x1.0mm) EMD56164PBH-60x M/P
256Mb x16 1.7~1.95V LPDDR 166MHz 60B (8x9x1.0mm) EMD56164PCH-60x M/P
2Gb x32 1.7~1.95V LPDDR 200MHz 90B (8x13x1.0mm) JSDA2G324PJ-50x M/P
512Mb x8 1.7~1.95V LPSDR 200MHz 54B (8x8x1.2mm) JS812164PAY-60 C/S
512Mb x8 1.7~1.95V LPDDR 200MHz WLCSP72(3.625x4.166mm) JSD12164PADZ-50x Contact us
512Mb x16 1.7~1.95V LPDDR 200MHz 60B (8x9x1.0mm) JSD12164PAH-50x M/P
512Mb x32 1.7~1.95V LPSDR 166MHz 90B (8x13x1.0mm) JS812324PAJ-60 T.B.D
512Mb x32 1.7~1.95V LPDDR 200MHz 90B (8x13x1.0mm) JSD12324PAJ-50x M/P

LP DRAM

PACKAGE LP DDR4x PRODUCTS

Density Data Width Voltage Option Max Frequancy Package Type Part Number Status
16Gb 1CH x16 1.8V/0.6V LPDDR4x 1866MHz 200B (10.0x15.0mm) JSL4BAG167ZAMF-05 M/P
16Gb 1CH x16 1.8V/0.6V LPDDR4x 2133MHz 200B (10.0x15.0mm) JSL4BAG167ZAMF-05A M/P
16Gb 2CH x32 1.8V/0.6V LPDDR4x 1866MHz 200B (10.0x15.0mm) JSL4BAG329ZAMF-05 M/P
16Gb 2CH x32 1.8V/0.6V LPDDR4x 2133MHz 200B (10.0x15.0mm) JSL4BAG329ZAMF-05A M/P
4Gb 1CH x16 1.8V/0.6V LPDDR4x 1866MHz 200B (10.0x15.0mm) JSL4A4G168ZAMF-05 M/P
4Gb 1CH x16 1.8V/0.6V LPDDR4x 2133MHz 200B (10.0x15.0mm) JSL4A4G168ZAMF-05A M/P
8Gb 1CH x16 1.8V/0.6V LPDDR4x 1866MHz 200B (10.0x15.0mm) JSL4B8G168ZAMF-05 M/P
8Gb 1CH x16 1.8V/0.6V LPDDR4x 2133MHz 200B (10.0x15.0mm) JSL4B8G168ZAMF-05A M/P
8Gb 2CH x32 1.8V/0.6V LPDDR4x 1866MHz 200B (10.0x15.0mm) JSL4A8G329ZAMF-05 M/P
8Gb 2CH x32 1.8V/0.6V LPDDR4x 2133MHz 200B (10.0x15.0mm) JSL4A8G329ZAMF-05A M/P

LP DRAM

PACKAGE LP DDR2 PRODUCTS

Density Data Width Voltage Option Max Frequancy Package Type Part Number Status
1Gb x16 1.2V LPDDR2 400MHz 134B (10.0x11.5mm) JSL21G168WABQ-25 C/S
1Gb x32 1.8V/1.2V LPDDR2 400MHz 134B (10.0x11.5mm) JSL2B1G328WABQ-25 M/P
2Gb x8 1.8V/1.2V LPDDR2 400MHz 134B (10.0x11.5mm) JSL22G328WABQ-25A M/P
2Gb x8 1.8V/1.2V LPDDR2 533MHz 134B (10.0x11.5mm) JSL22G328WABQ-25AM M/P
2Gb x8 1.8V/1.2V LPDDR2 533MHz 134B (10.0x11.5mm) JSL22G328WABQ-D25AM M/P
4Gb x32 1.8V/1.2V LPDDR2 533MHz 162B (10.0x11.5mm) JSL24G328WABQ-D25AM M/P